Committee
Committee Chairpersons
- Organizing Committee Chair:
- Nobuo Fujiwara (Mitsubishi Electric, Corp.)
- Executive Committee Chairs:
- Hirotaka Toyoda (Nagoya University)
- Geun Young Yeom (Shugkyunkwan University)
- Program Committee Chair:
- Nobuyuki Negishi (Hitachi, Ltd.)
- Publication Committee Chair:
- Osamu Sakai (Kyoto University)
Organizing Committee
Chair: N. Fujiwara ( Mitsubishi Electric Corp. ) Japan
Vice-chair: M. Izawa ( Hitachi High-Technologies Corp. ) Japan
T. Ohiwa ( Toshiba Corp. ) Japan
K. Kinoshita ( Tohoku University ) Japan
N. Negishi ( Hitachi High Technologies America, Inc. ) USA
O. Sakai ( Kyoto University ) Japan
M. Hori ( Nagoya University ) Japan
M. Horioka ( Applied Materials Inc. ) Japan
H. Toyoda ( Nagoya University ) Japan
K. Nojiri ( Lam Research Corp. ) Japan
T. Tatsumi ( Sony Corp. ) Japan
N. Yamamoto ( TOKYO ELECTRON YAMANASHI LIMITED ) Japan
K. Ono ( Kyoto University ) Japan
S. Hamaguchi ( Osaka University ) Japan
International Organizing Committee
Co-chair: J. G. Han ( Sungkyunkwan University ) Korea
T-H. Ahn ( Samsung Electronics Co., Ltd. ) Korea
H. Y. Chang ( Korea Advanced Institute of Science and Technology ) Korea
C. K. Choi ( Jeju National University ) Korea
V. Donnelly ( University of Houston ) USA
D. B. Graves ( University of California, Berkeley ) USA
L. van den Hove ( Interuniversity Microelectronics Center (IMEC) ) Belgium
O. Joubert ( LTM/CNRS ) France
M. J. Kushner ( University of Michigan ) USA
K. C. Leou ( National Tsing Hua University ) Taiwan
L. Overzet ( University of Texas at Dallas ) USA
R. Wise ( International Business Machines Corp. (IBM) ) USA
S. Xu ( Nanyang Technological University ) Singapore
Executive Committee
Chair: H. Toyoda ( Nagoya University ) Japan
Vice-chair: T. Ichiki ( The University of Tokyo ) Japan
Vice-chair: T. Nakano ( National Defense Academy of Japan ) Japan
Co-chair: G. Y. Yeom ( Sungkyunkwan University ) Korea
K. Kurihara ( Toshiba Corp. ) Japan
K. Ishikawa ( Nagoya University ) Japan
T. Ishijima ( Kanazawa University ) Japan
S. Tajima ( Nagoya University ) Japan
T. Akagi ( The University of Tokyo ) Japan
Publication Committee
Chair: O. Sakai ( Kyoto University ) Japan
Vice-chair: M. Sekine ( Nagoya University ) Japan
Vice-chair: S. Higashi ( Hiroshima University ) Japan
K. Eriguchi ( Kyoto University ) Japan
T. Abe ( Niigata University ) Japan
S. Hotta ( Kyoto Institute of Technology ) Japan
T. Ichiki ( The University of Tokyo ) Japan
K. Ishikawa ( Nagoya University ) Japan
N. Itabashi ( Hitachi, Ltd. ) Japan
K. Kinoshita ( Tohoku University ) Japan
H. Kuwano ( Tohoku University ) Japan
S. Nunomura ( Advanced Industrial Science and Technology (AIST) ) Japan
Y. Ohshita ( Toyota Technological Institute ) Japan
L. Overzet ( University of Texas at Dallas ) USA
K. Sasaki ( Hokkaido University ) Japan
Y. Shimogaki ( The University of Tokyo ) Japan
M. Shiratani ( Kyushu University ) Japan
E. Stamate ( Technical University of Denmark ) Denmark
K. Takahashi ( Kyoto Institute of Technology ) Japan
T. Tatsumi ( Sony Corp. ) Japan
Program Committee
Chair: N. Negishi ( Hitachi High Technologies America, Inc. ) USA
Vice-chair: H. Hayashi ( Toshiba Corp. ) Japan
Vice-chair: H. Kokura ( FUJITSU Semiconductor Ltd. ) Japan
T. Abe ( Niigata University ) Japan
K. Azuma ( Shimadzu Corp. ) Japan
N. Banno ( LEAP ) Japan
J.-P. Booth ( CNRS/Ecole Polytechnique ) France
K.-N. Chen ( National Chiao Tung University ) Taiwan
D. J. Economou ( University of Houston ) USA
K. Eriguchi ( Kyoto University ) Japan
P. Favia ( University of Bari ) Italy
M. Fukasawa ( Sony Corp. ) Japan
K. Harashima ( Renesas Electronics Corp. ) Japan
T. Hayashi ( Nagoya University ) Japan
S. Higashi ( Hiroshima University ) Japan
M. Hiramatsu ( Meijo University ) Japan
M. Honda ( TOKYO ELECTRON MIYAGI LTD. ) Japan
M. Horioka ( Applied Materials Inc. ) Japan
T. Ichiki ( The University of Tokyo ) Japan
K. Ishikawa ( Nagoya University ) Japan
T. Ishijima ( Kanazawa University ) Japan
N. Itabashi ( Hitachi, Ltd. ) Japan
N. Itagaki ( Kyushu University ) Japan
E. A. Joseph ( International Business Machines Corp. (IBM) ) USA
C. J. Kang ( Samsung Electronics Co., Ltd. ) Korea
S. Y. Kang ( Tokyo Electron Ltd. ) Japan
K. Karahashi ( Osaka University ) Japan
H. Kobayashi ( Hitachi, Ltd. ) Japan
H. Kondo ( Nagoya University ) Japan
A. Koshiishi ( Tokyo Electron Ltd. ) Japan
K. Kurihara ( Toshiba Corp. ) Japan
H. Kuwano ( Tohoku University ) Japan
S. K. Lee ( Hynix Semiconductor Inc. ) Korea
T. Maruyama ( Renesas Electronics Corp. ) Japan
Y. Morikawa ( ULVAC Inc. ) Japan
M. Morimoto ( Hitachi High-Technologies Corp. ) Japan
S. Miyazaki ( Nagoya University ) Japan
K. Nakamura ( Chubu University ) Japan
K. Nakamura ( Mitsubishi Electric Corp. ) Japan
M. Nakamura ( SEMATECH/ISMI ) Japan
Y. Nakao ( FUJITSU Semiconductor Ltd. ) Japan
M. Nakatani ( Panasonic Corp. ) Japan
K. Nojiri ( Lam Research Corp. ) Japan
T. Nozaki ( Tokyo Institute of Technology ) Japan
S. Nunomura ( Advanced Industrial Science and Technology (AIST) ) Japan
Y. Ohshita ( Toyota Technological Institute ) Japan
H. Ohtake ( Tokyo Electron Ltd. ) Japan
T. Okumura ( Panasonic Corp. ) Japan
F. Roozeboom ( Eindhoven University of Technology (TU/e) ) the Netherlands
Y. Sakiyama ( Lam Research Corp. ) USA
M. Sekine ( Nagoya University ) Japan
Y. Setsuhara ( Osaka University ) Japan
D. Shamiryan ( GLOBALFOUNDRIES ) Belgium
T. Shimizu ( Max-Planck-Institut fuer extraterrestrische Physik ) Germany
Y. Shimogaki ( The University of Tokyo ) Japan
T. Shirafuji ( Osaka City University ) Japan
M. Shiratani ( Kyushu University ) Japan
E. Stamate ( Technical University of Denmark ) Denmark
K. Takahashi ( Kyoto Institute of Technology ) Japan
T. Watanabe ( Waseda University ) Japan
H. Yamauchi ( Sharp Corp. ) Japan
G. Y. Yeom ( Sungkyunkwan University ) Korea
International Advisory Committee
Chair: J. Nishizawa ( Sophia University ) Japan
Y. Horiike ( University of Tsukuba ) Japan
S. Tachi ( Hitachi High-Technologies Corp. ) Japan
R. Gottscho ( Lam Research Corp. ) USA
T. Lill ( Applied Materials Inc. ) USA
O. Takai ( Kanto Gakuin University ) Japan
S. Zaima ( Nagoya University ) Japan
K. Tachibana ( Osaka Electro-Communication University ) Japan
T. Makabe ( Keio University ) Japan
M. Yoneda ( Renesas Semiconductor Engineering Corp. ) Japan
K. Tsujimoto ( JST ) Japan
N. Sumihiro ( LEAP ) Japan
M. Kondo ( AIST PCPV ) Japan
S. Fujimura ( Tokyo Institute of Technology ) Japan
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