Dry Process Symposium 2013 - 35th International Symposium on Dry Processs

August 30 Poster program

Presentation guideline

Poster session is divided into two halves in order to prevent congestion.

Core-time (1) 11:20-12:05 ♠ Odd number
Core-time (2) 12:05-12:50 ♦ Even number

Monitoring

P-11 ♠

Hikaru Kokura (FUJITSU Semiconductor Ltd.)
Prediction of Resist Residue in Remote Plasma by Linear Discriminant Analysis

P-12 ♦

Takayuki Ohta (Meijo Univ)
Non-contact Temperature Monitoring of Substrates Using Optical Interferometry on Plasma Processing

P-13 ♠

Yuji Kasashima (AIST)
Anomaly Detection in Plasma Processing Using Electrostatic Chuck Wafer Stage with Built-in Acoustic Emission Sensors

P-14 ♦

Taisei Motomura (AIST)
Practical Characteristic Impedance Monitoring for Anomaly Detection during Plasma Etching Process

Plasma Generation

P-21 ♠

Yeonwon Kim (Kyushu Univ)
Effects of Amplitude Modulation of RF Discharge Voltage on Silane Plasmas in Initial Phase

P-22 ♦

Ikuo Sawada (Tokyo Electron US Holding, Inc.)
Mechanism Elucidation of Center-peaked Plasma Density Profile in VHF-CCP Reactors

P-23 ♠

Taiki Kato (Tokyo Electron Ltd.)
A Numerical Study on Prediction of Film Profile  in Silicon Nitride PECVD

P-24 ♦

Tomonori Noda (Nagoya Univ)
Development of Magnet-Free Uniform Sputtering System for Dielectric Film Deposition

P-25 ♠

Daeho You (KAIST)
Power Coupling Enhancement of Ferrite Transformer Coupled Toroidal Discharge Due to the Plasma Loop Connectedness

P-26 ♦

In-Shik Bae (KAIST)
Plasma Parameter Controls in Thermal Electron Beam Discharge

P-27 ♠

Haruhiko Ito (Nagaoka Univ. of Tech)
Mechanism of the Production of the CH(A) State from the Dissociative Excitation of Tetramethylsilane in the Electron-Cyclotron Resonance Plasma of Ar

P-28 ♦

Yoshihiro Nakamura (Kyoto Univ)
High-density Microwave Plasma Source Using Negative-permeability Metamaterial

Novel Film Deposition

P-31 ♠

Shogo Kondo (Nagoya Univ)
Plasma Characteristics of Multipurpose Microwave Antenna and its Application to Silicon Thin Film Deposition

P-32 ♦

Yoshiaki Suda (Sasebo National College of Tech)
Study on the Processes of Thin Films Using Powder Target by Pulsed Laser Deposition Method

P-33 ♠

Sosuke Horita (Kanazawa Univ)
Fabrication of Polycrystalline Diamond Films Using Modulated Induction Thermal Plasmas into Reverse-Sawtooth-Waveform

P-34 ♦

Yohei Kashima (Meijo Univ)
Fabrication of Graphene Films Using Microwave Plama-enhanced CVD in Surface Wave Mode

P-35 ♠

Ryosuke Tsukada (Meijo Univ)
Nucleation Control of Nanographene Using Inductively Coupled Plasma Enhanced Chemical Vapor Deposition

P-36 ♦

Shahzada Qamar Hussain (Sungkyunkwan Univ)
Transparent Conductive Oxide Films with High Roughness and Haze Ratio by Light Trapping Scheme of Glass Texturing

P-37 ♠

Hai Zhang (Nagoya Univ)
Formation of High Density Fe-Nanodots on Ultrathin SiO2 Induced by Remote H2 Plasma

P-38 ♦

Susumu Toko (Kyushu Univ)
Contribution of Ionic Deposition Precursors to Si Thin Film Deposition

Surface Modification

P-41 ♠

Shogo Kaneta (Shizuoka Univ)
Surface Treatment of Dye-sensitized Solid-state Solar Cells Using Atmospheric Pressure Plasma Jet

P-42 ♦

Mihai Alexandru Ciolan (Shizuoka Univ)
Surface Functionalization of ZnO Nanoparticles with Ar/NH3 Surface-wave Plasma for Bioimaging Applications

P-43 ♠

Satomi Tajima (Nagoya Univ)
Fabricating the Smooth Chemically Dry Etched Si Surface for MEMS Devices

P-44 ♦

Kensuke Sasai (Nagoya Univ)
Surface Treatment of Three-Dimensional Product by Flexible Twin Microwave Plasma Source

P-45 ♠

Keisuke Maruyama (Hiroshima Univ)
Atmospheric Pressure Thermal Plasma Jet annealing for 4H-SiC and Aluminium Activation

P-46 ♦

Keiji Nakamura (Chubu Univ)
Improvement of Hydrophilicity of Multi-wall Carbon Nanotube with Pulse Plasma Treatment

P-47 ♠

Yui Okuyama (Chiba Inst. of Tech)
Influence of H2O and CO2 as Impurities on Negative Ion Mobilities and their Ion Formations in O2

P-48 ♦

Yuki Yoshimitsu (Kyoto Univ)
Plasma Nitriding of Non-Ferrous Metals with Atmospheric-Pressure Plasma Jet

P-49 ♠

Yoshihiko Ueda (Oita Univ)
Surface Electronic Properties Controlled by Laminar Atmospheric-pressure Plasma on Fabric-type Electrode

Liquid Plasmas

P-51 ♠

Daisuke Ogawa (Chubu Univ)
The Evolutions of Low-Pressure Plasma by Direct Liquid Injections

P-52 ♦

Tatsuru Shirafuji (Osaka City Univ)
Numerical Simulation of Electric Double Layer in Contact with Dielectric Barrier Discharge - Effects of Ion Transport Parameters in Liquid -

P-53 ♠

Tomohiro Takahashi (Nagoya Univ)
Superposition of Ultrasonic Power on Microwave Plasma and its Effect on Solution Treatment Efficiency

P-54 ♦

Tatsuo Ishijima (Kanazawa Univ)
Novel Photoresist Removal Method Using Slot-antenna Excited Microwave Plasma in Ultrapure Water

P-55 ♠

Keisuke Yoshida (Meijo Univ)
Preparation of Pt/nanographene paste using alcohol in-liquid plasma for fuel cell application

P-56 ♦

Jerome Jolibois (Nagoya Univ)
Effect of Hydrogen Peroxide on Carbon Materials Produced by Gas-liquid Plasma

P-57 ♠

Kuangda Sun (Nagoya Univ)
Low-temperature Insulating Film Formation with Plasma Enhanced Mist Chemical Vapor Deposition

Etching Technology

P-61 ♠

Yusuke Kondo (Nagoya Univ)
Control of Gas Phase Reaction in Etching Plasmas Employing Hydro-fluorocarbon Gases

P-62 ♦

Tomiko Wanifuchi (Tokyo Electron Miyagi Ltd.)
Film Property Impact on Silicon Nitride Etching

P-63 ♠

Sung-Woon Cho, Chang-Koo Kim (Ajou Univ)
Angular Dependence of Etch rates and Etch Selectivity of Si3N4 in C4F6/Ar/O2/CH2F2 Plasmas

P-64 ♦

Toshio Hayashi (Nagoya Univ)
Quantum Chemical Investigations for Dissociation Paths of Fluoro-methane Compounds

P-65 ♠

Daiki Iino (Toshiba Corp.)
Influence of Gas Addition and Substrate Bias Voltage on Br Radical Behavior in HBr Inductively Coupled Plasma

P-66 ♦

Hayato Ogawa (Nagoya Univ)
Cross Section Measurement of the Neutral Dissociation of CH2F2 by Electron Impact

P-67 ♠

Qiang Chen (Univ. of Tokyo)
Silicon Etching in an Inductively Coupled Plasma Microjet Expanded in a Low-pressure Chamber

P-68 ♦

Chieh-Te Chen (United Microelectronics Corp.)
The Solution for Punching Through in Stitch Area by Gas Composition at 20 nm and 14 nm Double Patterning Etch

P-69 ♠

Jongyun Park (Nagoya Univ)
Plasma Etching of Ga-based Compound Semiconductor

P-70 ♦

Il Hoon Lee (Inha Univ)
Effect of H2O Gas on Etch Characteristics of Magnetic Tunnel Junction Stacks Using a H2O/CH3OH Plasma

P-71 ♠

Su Min Hwang (Inha Univ)
Comparison of Etch Characteristics of CoFeB Magnetic Thin Films Using CH3OH, CH4 and H2O Plasmas

P-72 ♦

Kazuhiro Karahashi (Osaka Univ)
Selective Etching of Ni over Ta or TaOx by N+ and CO+ Ion Irradiation

P-73 ♠

Ka Youn Kim (Sungkyunkwan Univ)
Dry Etching of Silicon Nitride in C3F6/O2 and C3F6O/O2 Gas Mixtures and their Global Warming

P-74 ♦

Nobuya Nakazaki (Kyoto Univ)
Molecular Dynamics Analysis of Si Etching in HBr-based Plasmas: Effects of Neutral Radicals

P-75 ♠

Keita Miyake (Osaka Univ)
Characterization of Polymer Layer Formation during SiO2/SiN Etching by Fluoro/Hydrofluorocarbon Plasmas