Technical Program
August 29
7:30 Registration
8:30 Plenary 1 (AEPSE)
Chairperson: H. Toyoda (Nagoya Univ)
G. Y. Yeom (SKKU)
Atomic Layer Etching : Possible Application to Next Generation Nanoelectronics Device Fabrication
9:20 Break
9:50 Opening
N. Negishi (Program Committee Chair)
Opening remarks
10:10 Young researcher award ceremony
Presenter: N. Fujiwara (Organizing Committee Chair)
10:15 Nishizawa award lecture
Chairperson: H. Toyoda (Nagoya Univ)
Haruo Okano (IBIDEN Co., Ltd.)
Think the unthinkable! and keep up the good work with can-do spirit!!!
10:20 Session A Monitoring and Sensing
Chairperson: K. Kurihara (Toshiba Corp.), K. Ishikawa (Nagoya Univ)
10:20 Invited A-1
T. Moriya (Tokyo Electron)
Preventive Methods on Plasma Chamber Corrosions by Earthquake – Based from our Valuable Experience –
11:00 A-2
A. Matsuda (Kyoto Univ)
μ-Photoreflectance Spectroscopy for Microscale Monitoring of Plasma-induced Physical Damage
11:20 A-3
A. Pandey (Chubu Univ)
Opto-curling Probe Method for Space-resolved Measurement of Electron and Radical Densities in Plasma
11:40 A-4
A. P. Milenin (IMEC)
Effect of Chuck Temperature Adjustment on STI CDU and Sensor Wafer Readouts
12:00 Lunch
13:10 Session B Etching Technology
Chairperson: K. Eriguchi (Kyoto Univ), M. Fukasawa (Sony Corp.)
13:10 Invited B-1
D. Kim (Samsung)
Challenges and Opportunities of Dry Etching Technology for Future Semiconductor Developments
13:50 B-2
M. Matsui (Hitachi)
Surface Analysis for Polysilicon Gate Etching Process in Pulsed Microwave Plasma
14:10 B-3
Y. Miyawaki (Nagoya Univ)
Analysis of Fluorocarbon Gas Plasma Surface Interactions Using Real-time/In-situ Electron Spin Resonance
14:30 B-4
Y. Oshiki (Toshiba)
SiO2 Etch Process Using CHF3/HBr Gas Chemistry without Roughening ArF Photoresist Employing DFS CCP RIE
14:50 B-5
E. Suzuki (Tokyo Electron)
Highly Selective and Precisely- Controlled Etch-Rate Aluminum Etching by Ar/HBr/CH3F/O2 Gas Chemistry
15:10 Break
15:30 <AEPSE-DPS Joint Session> Plasma Based Processes for Graphene and Carbon Materials toward Device Application
Chairperson: M. Hiramatsu (Meijo Univ), N. E. Lee (Sungkyunkwan Univ)
15:30 Invited
M. Meyyappan (NASA)
An Overview of Carbon Nanotubes and Graphene for Advanced Device Applications
16:00 Invited
Won J. Yoo (SKKU)
Plasma Etching Characteristics of Hexagonal Boron Nitride for Two Dimensional Electron Devices
16:30 Invited
S. Sato (AIST)
Application of Graphene to Transistors and Interconnects for Future LSI's
17:00 Invited
Nae-Eung Lee (Sungkyunkwan Univ)
Ultrasensitive Physical and Biological Sensing Using Graphene Channel Field-Effect Transistors
17:30 Break
17:40 Session C Surface Treatment with High Pressure Plasma
Chairperson: T. Ishijima (Kanazawa Univ), O. Sakai (Kyoto Univ)
17:40 C-1
M. Noma (Shinko Seiki)
Improved Hardness and Electrical Property of c-BN Thin Films by Magnetically Enhanced Plasma Ion Plating Technique
18:00 C-2
T. Okumura (Panasonic)
Recovery of Plasma-Induced Si Substrate Damage Using Atmospheric Thermal Plasma
18:20 C-3
S. Hayashi (Hiroshima Univ)
Grain Growth Control during Leading Wave Crystallization Induced by Micro-Thermal-Plasma-Jet Irradiation to Amorphous Silicon Films
18:50 Banquet
August 30
7:30 Registration
8:30 Plenary 2 (AEPSE)
Chairperson: T. Tatsumi (Sony Corp.)
K. Ono (Kyoto Univ)
Plasma Etch Challenges for Nanoscale Device Fabrication: Modeling, Analysis, and Control of Plasma-Surface Interactions
9:20 Break
9:30 Session D <Arranged> Plasma Process for Emerging Non-Volatile Memory Devices
Chairperson: K. Nojiri (Lam Research Corp.), T. Okumura (Panasonic Corp.)
9:30 Invited D-1
R. Martin (IBM)
Plasma Etch Challenges for Sub-14nm Devices and Advanced Memory Technologies
10:10 D-2
K. Kinoshita (Tohoku Univ)
Plasma Process Induced Physical Damages on Multilayered Magnetic Films for Magnetic Domain Wall Motion
10:30 D-3
R. Hinoura (Hyogo Univ)
In-situ XPS Study of GCIB Etching for Materials Used in STT-MRAM
10:50 D-4
S. Tahara, E. Nishimura (Tokyo Electron)
Etching of Co-Pd with Significantly Reduced Sidewall Re-deposition
11:10 Break
11:20 Poster Session (90 min)
Chairperson: H. Hayashi (Toshiba Corp.), M. Fukasawa (Sony Corp.)
12:50 Lunch
13:50 Session E Plasma Process for 3D Device, FPD, Photovoltaic Devices
Chairperson: T. Shirafuji (Osaka City Univ), S. Higashi (Hiroshima Univ)
13:50 Invited E-1
H. Kim (Yonsei Univ.)
The Characteristics of Plasma Enhanced Atomic Layer Deposition and Applications to Nanoscale Device Fabrication
14:30 E-2
Y. Setsuhara (Osaka Univ)
ICP-Enhanced Reactive Sputter Deposition Processes for Low-Temperature Formation of IGZO TFT
14:50 E-3
Y. Ding (Tokyo Inst. of Tech)
Performance Enhancement of Hybrid Si-nanocrystal/P3HT Solar Cells through Hydrofluoric Acid Vapor Treatment
15:10 Break
15:20 Session F <Arranged> Advanced Process Technology for Patterning beyond 20 nm Era
Chairperson: H. Ohtake (Tokyo Electron Ltd.), H. Kokura (Fujitsu Semiconductor Ltd.)
15:20 Invited F-1
E. Kunnen (IMEC)
Dry Etch Challenges in EUV-based SRAM Patterning beyond 20 nm
16:00 F-2
H. Yamamoto (Toshiba)
Selective Etch of Poly(methyl methacrylate) in Block Copolymer Employing Dual Frequency Superimposed CCP for DSA Lithography
16:20 F-3
N. Kofuji (Hitachi)
Effect of Line-Edge-Roughness on Wiggling
16:40 Break
16:50 Session G Plasma-induced Damage
Chairperson: H. Hayashi (Toshiba Corp.), K. Kinoshita (Tohoku Univ)
16:50 G-1
K. Eriguchi (Kyoto Univ)
Scenario of Plasma-induced Physical Damage in FinFET – The Effects of "Straggling" of Incident Ions by a Range Theory –
17:10 G-2
M. Fukasawa (Sony Corp.)
Comprehensive Evidence-based Guidelines for Annealing Plasma-damaged Si Substrates – Impact of Plasma Process Conditions –
17:30 G-3
M. Kamei (Kyoto Univ)
Impacts of Plasma-induced Charging Damage on Random Telegraph Noise (RTN) Behaviors in MOSFETs with SiO2 and High-k Gate Dielectrics
17:50 G-4
C. H. Chou (TSMC)
The Effect of UV and High Energy VUV Photon Irradiation on CMOS Image Sensor
18:10 Closing
H. Hayashi (DPS2014 Program Committee Chair)
Closing Remarks
Copyright© 2013 Dry Process Symposium. All rights reserved.