Chair: |
M. Matsui (Hitachi, Ltd.) Japan |
Vice-chair: |
M. Honda (TOKYO ELECTRON MIYAGI LTD.) Japan |
H. Akatsuka (Tokyo Institute of Technology) Japan |
K. Eriguchi (Kyoto University) Japan |
M. Fukasawa (Sony Semiconductor Solutions Corp.) Japan |
H. Hayashi (Daikin Industries, Ltd.) Japan |
S. Higashi (Hiroshima University) Japan |
M. Hori (Nagoya University) Japan |
T. Ichiki (The University of Tokyo) Japan |
K. Ishikawa (Nagoya University) Japan |
K. Karahashi (Osaka University) Japan |
K. Kinoshita (AIO Core Co., Ltd.) Japan |
K. Koga (Kyushu University) Japan |
H. Kokura (Tokyo Electron Ltd.) Japan |
T. Koshizawa (Applied Materials Inc.) USA |
K. Kurihara (KIOXIA Corp.) Japan |
M. Kurihara (Hitachi, Ltd.) Japan |
T. Maruyama (Renesas Electronics Corp.) Japan |
Y. Morikawa (ULVAC Inc.) Japan |
M. Nakatani (Panasonic Industry Corp.) Japan |
T. Ohba (Lam Research Corp.) Japan |
D. Ogawa (Chubu University) Japan |
M. Omura (KIOXIA Corp.) Japan |
K. Satoh (Muroran Institute of Technology) Japan |
T. Shirafuji (Osaka Metropolitan University) Japan |
M. Shiratani (Kyushu University) Japan |
K. Takeda (Meijo University) Japan |
T. Tatsumi (Sony Semiconductor Solutions Corp.) Japan |
M. Terahara (Western Digital Corp.) Japan |
H. Toyoda (Nagoya University) Japan |
T. Watanabe (Waseda University) Japan |
Chair: |
T. Ohba (Lam Research Corp.) Japan |
Vice-chair: |
M. Omura (KIOXIA Corp.) Japan |
Vice-chair: |
Y. Morikawa (ULVAC Inc.) Japan |
A. Abe (Sony Semiconductor Manufacturing Corp.) Japan |
K.H. Bai (Samsung Electronics Co., Ltd.) Korea |
R. L. Bruce (IBM Corp.) USA |
Y. Daigo (Tokyo Electron Ltd.) Japan |
E. Despiau-Pujo (CNRS/University of Grenoble Alpes) France |
R. Dussart (CNRS/Université d'Orléans) France |
A. Dzarasova (Quantemol Ltd.) UK |
D.J. Economou (University of Houston) USA |
S. U. Englemann (IBM Corp.) USA |
M. Fukasawa (Sony Semiconductor Solution Corp.) Japan |
I. P. Ganachev (Shibaura Mechatronics Corp.) Japan |
K. Hattori (Nagoya University) Japan |
N. Hayashi (Kyushu University) Japan |
T. Hayashi (Nagoya University) Japan |
S. Higashi (Hiroshima University) Japan |
M. Hiramatsu (Meijo University) Japan |
M. Honda (TOKYO ELECTRON MIYAGI LTD.) Japan |
T. Ichiki (The University of Tokyo) Japan |
K. Ishikawa (Nagoya University) Japan |
Y. Ishii (Hitachi High Technologies America, Inc.) USA |
S. Kanakamedala (Western Digital Corp.) USA |
S. Y. Kang (Samsung Electronics Co., Ltd.) Korea |
K. Karahashi (Osaka University) Japan |
K. Koga (Kyushu University) Japan |
H. Kokura (Tokyo Electron Ltd.) Japan |
H. Kondo (Kyushu University) Japan |
A. Koshiishi (Samsung Electronics Co., Ltd. ) Korea |
T. Koshizawa (Applied Materials Inc.) USA |
N. Kuboi (Sony Semiconductor Solutions Corp.) Japan |
K. Kurihara (KIOXIA Corp.) Japan |
M. Kurihara (Hitachi, Ltd.) Japan |
T. Maruyama (Renesas Electronics Corp.) Japan |
M. Matsui (Hitachi, Ltd.) Japan |
S. Miyazaki (Nagoya University) Japan |
H. Miyazoe (IBM Corp.) USA |
M. Morimoto (Hitachi High-Tech Corp.) Japan |
K. Nakamura (Chubu University) Japan |
M. Nakamura (MAMO) Japan |
S. Nunomura (Advanced Industrial Science and Technology -AIST) Japan |
S. Okita (Panasonic Connect Co., Ltd.) Japan |
M. Ohryoji (Western Digital Corp.) Japan |
M. Ohuchi (Micron Memory Japan, K.K.) Japan |
H. Ohtake (Hitachi High-Tech Corp.) Japan |
J-C. Park (Samsung Electronics Co., Ltd.) Korea |
E. Pargon (LTM-CNRS) France |
F. Roozeboom (University of Twente) Netherlands |
T. Seki (Kyoto University) Japan |
Y. Setsuhara (Osaka University) Japan |
P. Shen (Air Liquide Japan, Ltd.) Japan |
Y. Shimogaki (The University of Tokyo) Japan |
T. Shirafuji (Osaka Metropolitan University) Japan |
M. Shiratani (Kyushu University) Japan |
E. Stamate (Technical University of Denmark) Denmark |
K. Takahashi (Kyoto Institute of Technology) Japan |
K. Tapily (TEL Technology Center America) USA |
M. Terahara (Western Digital Corp.) Japan |
M. Titus (The University of Arizona) USA |
H. Toyoda (Nagoya University) Japan |
J. H. Um (Samsung Electronics Co., Ltd.) Korea |
T. Watanabe (Waseda University) Japan |
M. Yamada (Hitachi, Ltd.) Japan |
G-Y. Yeom (Sungkyunkwan University) Korea |
T-Y Yu (TSMC) Taiwan |