| Chair: |
H. Hayashi (KIOXIA Corporation) Japan |
| Vice-chair: |
K. Kinoshita (AIO Core Co., Ltd.) Japan |
| H. Akatsuka (Tokyo Institute of Technology) Japan |
| K. Eriguchi (Kyoto University) Japan |
| N. Fujiwara (Mitsubishi Electric Corp.) Japan |
| M. Fukasawa (Sony Semiconductor Solutions Corp.) Japan |
| S. Hamaguchi (Osaka University) Japan |
| S. Higashi (Hiroshima University) Japan |
| M. Honda (TOKYO ELECTRON MIYAGI LTD.) Japan |
| M. Hori (Nagoya University) Japan |
| T. Ichiki (The University of Tokyo) Japan |
| K. Ishikawa (Nagoya University) Japan |
| K. Karahashi (Osaka University) Japan |
| H. Kokura (Samsung Electronics Co., Ltd) Korea |
| M. Matsui (Hitachi, Ltd.) Japan |
| Y. Morikawa (ULVAC Inc.) Japan |
| M. Nakatani (Panasonic Corp.) Japan |
| N. Negishi (Hitachi, Ltd.) Japan |
| M. Sekine (Nagoya University) Japan |
| T. Shirafuji (Osaka City University) Japan |
| M. Shiratani (Kyushu University) Japan |
| T. Tatsumi (Sony Semiconductor Solutions Corp.) Japan |
| M. Terahara (Western Digital Corp.) Japan |
| T. Watanabe (Waseda University) Japan |
|
A. Agarwal (KLA-Tencor Corp.) USA |
| W. Boullart (Interuniversity Microelectronics Center-IMEC) Belgium |
| J. Brcka (Tokyo Electron U.S. Holdings, Inc.) USA |
| H.Y. Chang (Korea Advanced Institute of Science and Technology) Korea |
| E-H. Choi (Kwangwoon University) Korea |
| O. Joubert (LTM/CNRS) France |
| W.M.M. Kessels (Eindhoven University of Technology) Netherlands |
| K. C. Leou (National Tsing Hua University) Taiwan |
| T. Lill (Lam Research Corp.) USA |
| G. S. Oehrlein (University of Maryland) USA |
| L. Overzet (University of Texas at Dallas) USA |
| M. Sankaran (Case Western Reserve University) USA |
| P. Ventzek (Tokyo Electron U.S. Holdings, Inc.) USA |
| J.S. Wu (National Chiao Tung University) Taiwan |
| G-Y. Yeom (Sungkyunkwan University) Korea |
| S-J. Yoo (NFRI) Korea |
| Chair: |
T. Shirafuji (Osaka City University) Japan |
| Vice-chair: |
H. Akatsuka (Tokyo Institute of Technology) Japan |
| Vice-chair: |
T. Ishijima (Kanazawa University) |
| K. Eriguchi (Kyoto University) Japan |
| S. Higashi (Hiroshima University) Japan |
| T. Ichikawa (KIOXIA Corporation) Japan |
| T. Ichiki (The University of Tokyo) Japan |
| K. Ishikawa (Nagoya University) Japan |
| K. Karahashi (Osaka University) Japan |
| K. Kinoshita (AIO Core Co., Ltd.) Japan |
| N. Kuboi (Sony Semiconductor Solutions Corp.) Japan |
| K. Kurihara (KIOXIA Corporation) Japan |
| H. Kuwano (Tohoku University) Japan |
| S. Nunomura (Advanced Industrial Science and Technology-AIST) Japan |
| L. Overzet (University of Texas at Dallas) USA |
| Y. Shimogaki (The University of Tokyo) Japan |
| M. Shiratani (Kyushu University) Japan |
| E. Stamate (Technical University of Denmark) Denmark |
| K. Takahashi (Kyoto Institute of Technology) Japan |
| K. Takeda (Meijo University) Japan |
| Chair: |
M. Terahara (Western Digital Corporation) Japan |
| Vice-chair: |
Y. Morikawa (ULVAC Inc.) Japan |
| Vice-chair: |
M. Fukasawa (Sony Semiconductor Solution Corp.) Japan |
| J-P. Booth (CNRS/Ecole Polytechnique) France |
| R. L. Bruce (IBM Corp.) USA |
| E. Despiau-Pujo (CNRS/University of Grenoble Alpes) France |
| R. Dussart (CNRS/Université d'Orléans) France |
| A. Dzarasova (Quantemol Ltd.) UK |
| D.J. Economou (University of Houston) USA |
| S. U. Englemann (IBM Corp.) USA |
| K. Eriguchi (Kyoto University) Japan |
| K. Hattori (Shibaura Mechatronics Corp.) Japan |
| N. Hayashi (Kyushu University) Japan |
| T. Hayashi (Nagoya University) Japan |
| S. Higashi (Hiroshima University) Japan |
| M. Hiramatsu (Meijo University) Japan |
| M. Honda (TOKYO ELECTRON MIYAGI LTD.) Japan |
| T. Ichiki (The University of Tokyo) Japan |
| K. Ishikawa (Nagoya University) Japan |
| Y. Ishii (Hitachi High Technologies America, Inc.) USA |
| S. Y. Kang (Tokyo Electron Ltd.) Japan |
| S. Kanakasabapathy (Lam Research Corp.) USA |
| K. Karahashi (Osaka University) Japan |
| H. Kobayashi (Hitachi, Ltd.) Japan |
| K. Koga (Kyushu University) Japan |
| H. Kokura (Samsung Electronics Co., Ltd.) Korea |
| H. Kondo (Nagoya University) Japan |
| A. Koshiishi (Samsung Electronics Co., Ltd. ) Korea |
| N. Kuboi (Sony Semiconductor Solutions Corp.) Japan |
| K. Kurihara (KIOXIA Corporation) Japan |
| M. Kurihara (Hitachi, Ltd.) Japan |
| H. Kuwano (Tohoku University) Japan |
| J-F. de Marneffe (Interuniversity Microelectronics Center-IMEC) Belgium |
| T. Maruyama (Renesas Electronics Corp.) Japan |
| M. Matsui (Hitachi, Ltd.) Japan Japan |
| S. Miyazaki (Nagoya University) Japan |
| H. Miyazoe (IBM Corp.) USA |
| M. Morimoto (Hitachi High-Technologies Corp. Taiwan) Taiwan |
| K. Nakamura (Chubu University) Japan |
| M. Nakamura (MAMO) Japan |
| Y. Nakamura (Sony Semiconductor Manufacturing Corp.) Japan |
| N. Ning (University of Marseille) France |
| S. Nunomura (Advanced Industrial Science and Technology -AIST) Japan |
| S. Okita (Panasonic Smart Factory Solutions Co., Ltd.) Japan |
| T. Ohba (Lam Research Corp.) Japan |
| M. Ohuchi (Micron Memory Japan, GK.) Japan |
| H. Ohtake (Hitachi High-Technologies Corp.) Japan |
| M. Omura (KIOXIA Corporation) Japan |
| J. Park (Samsung Electronics Co., Ltd.) Korea |
| F. Roozeboom (Eindhoven University of Technology-TU/e) Netherlands |
| Y. Sakiyama (Lam Research Corp.) USA |
| M. Sekine (Nagoya University) Japan |
| Y. Setsuhara (Osaka University) Japan |
| P. Shen (Air Liquide Japan, Ltd.) Japan |
| Y. Shimogaki (The University of Tokyo) Japan |
| T. Shirafuji (Osaka City University) Japan |
| M. Shiratani (Kyushu University) Japan |
| E. Stamate (Technical University of Denmark) Denmark |
| K. Takahashi (Kyoto Institute of Technology) Japan |
| K. Tapily (TEL Technology Center America) USA |
| M. Titus (Western Digital Corp.) USA |
| H. Toyoda (Nagoya University) Japan |
| J. H. A. Um (Samsung Electronics Co., Ltd.) Korea |
| T. Watanabe (Waseda University) Japan |
| T. Yagisawa (KIOXIA Corporation) Japan |
| H. Yamauchi (Sharp Corp.) Japan |
| G-Y. Yeom (Sungkyunkwan University) Korea |
| T-Y Yu (TSMC) Taiwan |
