Presentation guideline
Poster session is divided into two halves in order to prevent congestion.
At least one of the authors must stay in front of the poster during the assigned Core-Time:
Core-time (1) 13:45～14:35　†　Odd number
Core-time (2) 14:35～15:25　‡　Even number

Etching Technology

• †P-1 A. Tanide

  Refinement of roughness and damages of GaN in chlorine plasma etching at high substrate temperature using two steps at different bias voltages

• ‡P-2 J. Ni

  Etching characteristics of silicon nitride film in plasma of fluoroethane (CH₂FCHF₂), Ar, and O₂ mixture

• †P-3 T. Tillocher

  Benefits of cryogenic processes in advanced etching

• ‡P-4 D. Iino

  High aspect ratio etching process of SiO₂ films by using on site synthesized C₂ F₄ from CF₄

• †P-5 T. Hayashi

  Jahn-Teller effect and dissociative properties of CHF₃ obtained using computational chemistry

• ‡P-6 D. Sung

  Comparison of etch characteristics using C_x (X=4,5,7)F₈

• ‡P-8 J-S. Oh

  ACL etching masked with High-χ BCP

Manufacturing Technologies (AEC, APC, EES, FDC)

• †P-9 H. Ashizawa

  Effect of the Microstructures of Yttria Coatings on their Fluorination Behavior in Fluorine-based Plasma

Surface Reaction and Damage

• ‡P-10 S. Hamaguchi

  Fundamental Properties of Fluorocarbon Reactive Ion Etching of SiO₂

• †P-11 E. J. Tinacba

  Molecular dynamics simulation of Si atomic layer etching with NF₂ radicals and Ar⁺ ions

• ‡P-12 T. Omichi

  Suppression of etch pit formation in GaN etching using H₂-added Cl₂ plasma at 400°C

• †P-13 C. Huang

  Surface Activation of Polycarbonate by Linear Atmospheric Pressure Plasma Array

• ‡P-14 K. Miyashita

  Corrosion behavior of yttrium oxyfluoride ceramics in HCl and HNO₃ solution

Plasma Diagnostics and Monitoring System

• †P-15 Y. Lee

  In-situ Monitoring of Plasma Ignition Steps in Capacitively Coupled Plasma System

• ‡P-16 S. Lee

  Sensitivity Enhancement of Plasma Etching Endpoint Detection Using Modified Gaussian Mixture Model

• †P-17 Y. Shin

  Plasma Optical Signal Analysis for SiN_x Plasma Enhanced Chemical Vapor Deposition Processes

• ‡P-18 H. Akatsuka

  Radial Dependence of Rotational Temperature of N₂ and N₂⁺ Molecules in Microwave Discharge Nitrogen Plasma

• †P-19 S. An

  In-situ Process Monitoring for Eco-friendly Chemical Vapor Deposition Chamber Cleaning

• ‡P-20 Y. Matsuda

  Measurement of energy distribution function of charged particles incident on substrate in RF magnetron Sputtering by retarding field energy analyzer

Modeling and Simulation

• †P-21 M. Hanicinec

  Automatic Plasma Chemistry Generation with Quantemol Database

• ‡P-22 T. Yang

  SAQP Pitch Walking Improvement Path Finding by Simulation

• †P-23 P. Moroz

  General Feature Scale Simulator

• ‡P-24 N. Mauchamp

  Evaluation of the correlation between physical sputtering yield and material physical properties using Molecular Dynamics simulations

• †P-25 F. Pinzan

  Atomic scale simulations of H_x⁺ ions modification of SiO₂ thin films for an innovative ONO stack etching Process and SiO₂ patterns sidewalls

• ‡P-26 T. Kanki

  Simulations of negative ion extraction and transport for developing novel remote plasma processing

• †P-27 D. Im

  Planar Heating Chuck to Improve Temperature Uniformity of Plasma Processing Equipment

• ‡P-28 Y. Kawai

  Two dimensional simulations of large-area VHF H₂ plasma using plasma hybrid code

• †P-29 K. Ikeda

  A computational model for plasma enhanced chemical vapor deposition of silicon nitride

• ‡P-30 J. H. Um

  Study about uniformity of plasma according to species loss rate at chamber wall

• †P-31 K.-L. Chen

  Progress on Developing a Parallel Plasma Fluid Modeling Code Using Finite-Volume Method with an Unstructured Grid

Plasma Generation (Equipment/Source)

• ‡P-32 Y. Ohtsu

  Production of double ring-shaped magnetized radiofrequency hydrogen high-density plasma

• †P-33 D. Liu

  Development of remote negative ion plasma processing system

• ‡P-34 T. Morioka

  Measurement of drop in electron temperature in a flat plasma source with magnetic filter

Deposition Technologies (CVD / PVD)

• †P-35 T. Ohta

  Deposition of diamond like carbon film using high power impulse magnetron sputtering

• ‡P-36 M. R. Vasquez Jr.

  Synthesis of TiO₂/V₂O₅ heterojunction thin films using reactive magnetron sputtering

• †P-37 H. Kawasaki

  Preparation of several kinds of elements mixed thin films by plasma process using powder targets IV

• ‡P-38 T. Iida

  Development of vibrational equipment for direct deposition on surface of carbon powder

• †P-39 S.H. Hwang

  Effects of DC Pulse Bias on Deposition Characteristics of a-C:H Films Deposited by High Pressure Ar⁺CH₄ Plasma CVD

• ‡P-40 Y. Sugie

  Preparation of Si-Contained DLC by Co-Deposition of Filtered-Pulse-Arc and Electron-Beam Depositions

• †P-41 S. Muraoka

  Fabrication of low resistive amorphous In₂O₃:Sn films using impurity mediate amorphization method: Effects of substrate temperature

Atomic Layer Processes (ALD/ALE)

• ‡P-42 A. H. Basher

  Surface reactions of acetylacetone and hexafluoroacetylacetone as etchants for dry thermal atomic layer etching (ALE) of nickel oxide

• ‡P-44 K. Nakazawa

  Investigation of fluorine-based plasma for Atomic Layer Etching of GaN

• †P-45 H. Li

  Surface reaction mechanisms of plasma-based SiO₂ atomic layer deposition (ALD) processes

• ‡P-46 G. Tsuchibuchi

  A Comparative Study on the Oxidants for the Atomic Layer Deposition of Titanium Oxide Thin Films

Plasma Processes for 3D Device, FPD, Photovoltaic Devices

• ‡P-48 K. Hosomi

  Bimodal plasmon resonances by Ag/SiO₂ /Au system for high sensitive VOC detection

• †P-49 M. Moriyama

  Potential structure of high-aspect-ratio capillary hole in a pulsed-VHF capacitive coupled plasma

Plasma Processes for New Material Devices (MRAM, Power, Organic)

• †P-51 D. Watanabe

  SiC dry etch technology employ ing Chemical Dry Etch

• ‡P-52 D. Ogawa

  Effect of Plasma-processed Carbon Nanotubes for Polyurethane Composite Film

• †P-53 R. Tobe

  Growth of VO₂ thin films on conductive ITO layers by ICP-assisted sputtering and their electrical switching properties

• ‡P-54 S. Miyazaki

  Formation of High Density PtAl Nanodots Induced by Remote Hydrogen Plasma Exposure

• †P-55 T. Suwa

  Effect of in-situ post-annealing on the resistivity profile of Al-doped ZnO films in magnetron sputtering

Plasma Processes for Biological and Medical application, MEMS

• ‡P-56 L. Hsu

  The challenge of deep Si cavity etching in overcoming a tapered shape photoresist in MEMS microphone manufacturing

• †P-57 S. Subaedah

  Growth Characteristics of EL-4 T-cell with the activator CD3/CD28 Using Atmospheric Oxygen Plasma for Malaria Disease

• ‡P-58 Y. Matsunaga

  Gas species dependence of macrophage phagocytosis activation by atmospheric pressure plasma irradiation

• †P-59 R. Okabayashi

  Fruit surface sterilization and damage evaluation by treatment of high concentration ozone

• ‡P-60 N. Hayashi

  Activation and differentiation control of osteoclast precur-sor cells irradiated with oxygen plasma

• †P-61 Y. Hadano

  Electrospinning of polymer materials for fabrication of bioabsorbable nanofiber membranes

Atmospheric Pressure Plasma and Liquid Plasma

• ‡P-62 H. Matsuura

  Transmittance Spectra of Polyvinyl Alcohol -Potassium Iodine irradiated by Atmospheric Pressure Plasma Jet

• †P-63 T. Shirafuji

  Plasma-bullet propagation behind a dielectric plate irradiated with an APPJ

• ‡P-64 Y. Mizukawa

  Precise determination of Temperature Distribution in Molten on Insulating Substrate Silicon Formed by Atmospheric Pressure Thermal Plasma Jet Annealing

• †P-65 K. Segawa

  Large Area Annealing by Magnetic Field Scanning of Atmospheric Pressure Thermal Plasma Beam

• ‡P-66 H. Kondo

  Effects of functional groups in raw material molecules on synthesis rate and structures of nanographene Materials synthesized by in-liquid plasma using alcohols

• †P-67 T. N. Tran

  Improvement of Discharge Perormance For Long Time Irradiating with Atmospheric Plasma Gas Discharge

• ‡P-68 K. Oshima

  Synthesis of Aluminum Nitride on Al-Si Alloys using an Electric Discharge Process

• †P-69 T. Kobayashi

  Modeling study on AC atmospheric pressure He plasma jets interacting with a dielectric target

• ‡P-70 I. Ohsawa

  Synthesis of graphene oxide catalyst for fuel cell using gas liquid interfacial plasma

• †P-71 H. Akamatsu

  Distribution of zinc oxide nanoparticles in water with atmospheric pressure plasma jet irradiation

• ‡P-72 S. Imai

  Discharge Characteristics of Ar Atmospheric-pressure Plasma

New Dry Process Concepts

• †P-73 H. Itagaki

  Nanoparticle modified spherical particle for med by DC arc spheroidization for water atomized stainless steel powder