Presentation guideline
Poster session is divided into two halves in order to prevent congestion.
At least one of the authors must stay in front of the poster during the assigned Core-Time:
Core-time (1) 11:10 - 12:00　†　Odd number
Core-time (2) 12:00 - 12:50　‡　Even number

Etching Technology

• †P-1 Y. Ishii
  

  Surface Composition Modulation for SiGe by Plasma-Induced Si Surface Segregation

• ‡P-2 J. Piet
  

  Inhibition of carbon deposition on Si in CH₄/H₂/Ar ICP plasma at low bias by addition of O₂ or N₂O

• †P-3 T. Ito
  

  Etching reactions by polyatomic molecular ions containing fluorine atoms

• ‡P-4 T-T-N Nguyen
  

  Floating-Wire-Assisted Atmospheric Pressure Plasma for High-Speed Glass Etching

• †P-5 H. Shirahama
  

  Dry etching technologies for Cr film

• ‡P-6 T. Mitsunari
  

  Thermal Adsorption-Assisted Atomic Layer Etching of SiO₂

• †P-7 W. O. Lee
  

  Highly selective dry etching of Si₃N₄over SiO₂ using ClF₃/H₂ Plasma

• ‡P-8 T. Hayashi
  

  Dissociative properties of C₂HF₅ and C₂F₆ obtained using computational chemistry

• †P-9 H. Tanaka
  

  Time-multiplexing Plasma Etching Process and Tool in Minimal Fab

• ‡P-10 T. Seki
  

  Fabrication of multilayer lever structure by double-angled tching with reactive gas cluster injection

Surface Reaction and Damage

• †P-11 C. M. D. Cagomoc
  

  Molecular Dynamics Simulation of Nanometer-Scale Hole Etching of SiO₂ with Carbon Masks

• ‡P-12 Y. Fukunaga
  

  Fundamental study of the interaction of plasma species with organic materials by experimental and computational approaches

• †P-13 F. Le Roux
  

  Study of degradation of two-dimensional electron gas by plasma-etching of SiN on AlGaN/GaN heterostructures for power devices

• ‡P-14 T. Omichi
  

  High temperature etching of GaN with H₂-added Cl₂ plasma

• †P-15 E. J. Tinacba
  

  Role of F ions on high-speed etching of Si-based substrates

• ‡P-16 Y. Yamamoto
  

  Self-organized ripple patterns formed on pre-amorphized carbon surfaces

• †P-17 M. Tsukamoto
  

  Reduction of tarnished Ag using Ar/H2 plasmas studied by in-situ optical emission spectroscopy

• ‡P-18 A. Ogino
  

  Surface Investigation of Oxidized Carbon Films Prepared by Atmospheric Pressure Plasma and Low Pressure Microwave Plasma

• †P-19 S. Kameshima
  

  Plasma-enhanced CH₄ oxidation by CO₂ via catalyst oxidation/reduction cycle

• ‡P-20 R. Akatsu
  

  Densification behavior of yttrium oxyfluoride ceramics and their mechanical properties

• †P-21 K. Miyashita
  

  Plasma exposure behavior of yttrium oxyfluoride ceramics

• ‡P-22 T. Tamura
  

  Study of Ceramic Coating Characteristics to Reduce Small Particle Generation from Plasma Etching Chamber Wall

• †P-23 R. Tahara
  

  Volume resistivity of dense yttrium oxyfluoride ceramics fabricated by hot-pressing

• ‡P-24 N. Taoka
  

  Impact of remote plasma oxidation of GaN surface on photoluminescence properties

Plasma Diagnostics and Monitoring System

• †P-25 R. Sawata
  

  Experimental Investigation of Plasma Evolution After an Injection of Organic Solvent

• ‡P-26 H. Akatsuka
  

  Spectroscopic study on CO b ³ Σ+ state in microwave discharge CO₂ plasma and the effect of rare-gas admixture

• †P-27 J-S Oh
  

  Measurement of water cluster ions in plasma plume of an atmospheric pressure He plasma jet

• ‡P-28 M. Shinohara
  

  Deposition Process of Amorphous Carbon Film during Ethylene Plasma, Compared with the Process during Methane Plasma

• †P-29 H. Ohtomo
  

  Motion analysis of inter-particle interactions of three fine particles in Ar plasma

Modeling and Simulation

• ‡P-30 H. Li
  

  Computational study on silicon oxide PECVD process using TEOS/O_2/Ar/He

• †P-31 N. Mauchamp
  

  General scaling of sputtering yields; molecular dynamics study of Lennard-Jones systems

• ‡P-32 J.-S. Wu
  

  Rigorous Advanced Plasma Integration Testbed (RAPIT) –A Parallel Computing Platform for Multiphysics Simulation

• †P-33 T. Kobayashi
  

  Numerical simulation of O₂ premixed He plasma jets interacting with a grounded target

• ‡P-34 K. Denpoh
  

  Multiscale Simulation of Titanium PECVD Process

• †P-35 S. Kawaguchi
  

  Method for obtaining longitudinal third-order transport coefficient by using α parameters

• ‡P-36 Y.Saito
  

  Global Model Analysis of 150 kHz Band High-Power Pulse Burst Inductively Coupled Plasma

• †P-37 J. Um
  

  Numerical study about accumulated charge effect on feature profile

• †P-39 T. Yagisawa
  

  First Principle Molecular Dynamics of Fluorocarbon Molecule Injection into Si Surfaces

Plasma Generation (Equipment/Source)

• ‡P-40 D. Liu
  

  Effect of longitudinal magnetic field on plasma discharge with spiral antennas

• †P-41 T. Morioka
  

  Pulsed gas injection for effectively producing negative oxygen ion plasmas

• ‡P-42 S. Fujimura
  

  Ring-shaped microwave plasma production in liquid flow environment for nanoparticle synthesis

• †P-43 T. Maegawa
  

  Characteristics of a High-Repetition Nanosecond Pulsed Nitrogen Glow Discharge and Its Application to a Plasma Nitriding Technique

Deposition Technologies (CVD / PVD)

• ‡P-44 Y. Mastuda
  

  Uniform deposition of Ga-doped ZnO film by narrow gap RF magnetron discharge using buffer layer

• †P-45 Y. Ohashi
  

  Defect termination mechanism in amorphous carbon films by atomic hydrogen radicals

• ‡P-46 Y. Kamimura
  

  Effect of low-energy ion impact on the structure of boron nitride films studied in surface-wave plasma

• †P-47 H. Kawasaki
  

  Preparation of several kinds of elements mixed thin films by plasma process using powder targets III

• ‡P-48 K. Sakai
  

  Comparative investigation on DLC films prepared by Reactive High-Power Impulse Magnetron Sputtering of Ar/CH₄ and Ar/C₂H₄ Mixture

• †P-49 T. Harigai
  

  Preparation of Conductive Hard Film Consisting of Ultra-Thin N-DLC Multilayers

• ‡P-50 C. Sekizaki
  

  Structural analysis of hydrogenated amorphous carbon nitride films formed from the decomposition of CH₃CN in the microwave discharge flow of Ar

• †P-51 Y. Ohtsu
  

  Treatment of polycarbonate plate for next-generation vehicle window by radio frequency magnetron plasma sputtering with an arrangement of cylindrical magnets

• ‡P-52 K. Takenaka
  

  Gate-bias instability of post-deposition plasma treated amorphous InGaZnOx thin-film transistors prepared with plasma-assisted reactive magnetron sputtering

• †P-53 R. Yoshida
  

  Preparation of TiSiN films by High Power Pulsed Sputtering Penning discharge

• ‡P-54 T. Tanaka
  

  Properties of TiON Films prepared by Reactive High Power Pulsed Magnetron Sputtering containing O₂ and N₂ gases

• †P-55 Y. Shibata
  

  Electrical Conductivity of Si-DLC films prepared by HiPIMS combined with PBII system

• ‡P-56 A. Tanide
  

  Epitaxial growth of GaN films with the argon-based sputtering method using additive H₂ and Cl₂ gases

• †P-57 T. Kimura
  

  Deposition and ion irradiation multi-process coating of diamond-like carbon films using bipolar type plasma-based ion implantation

• ‡P-58 L. Shi
  

  Effects of Higher-Order Silane deposition on spatial profile of SiH₂/SiH bond density ratio of a-Si:H films

• †P-59 Y. Miwa
  

  Dependence of Si content on Si-doped DLC film deposited by using magnetron sputtering

• ‡P-60 K. Iga
  

  Deposition mechanism of diamond-like carbon using high power impulse magnetron sputtering

• †P-61 T. Suwa
  

  Effects of He gas addition on the growth of transparent conductive Al-doped ZnO films in radio frequency magnetron sputtering

• ‡P-62 K. Imoto
  

  Sputter deposition of low resistive amorphous In₂O₃:Sn films using nitrogen-mediated amorphization method: Effects of target-substrate distance

• †P-63 M. Nakamura
  

  Gas phase diagnostics of high power impulse magnetron sputtering plasma for TiN film deposition

• ‡P-64 T. Suzuki
  

  Effect of reactive species on the structure of carbon nanowalls grow in CH₄/H₂/Ar mixture plasma

• †P-65 R. Morioka
  

  Nickel nitride semiconductor was synthesized by thermal chemical vapor deposition

• ‡P-66 N. Shimizu
  

  Influence of Chamber Pressure on the Crystal Quality of Homo-Epitaxial GaN Grown by Radical Enhanced MOCVD (REMOCVD)

Atomic Layer Processes (ALD/ALE)

• †P-67 R.H.J. Vervuurt
  

  Plasma Modification of Si-compound Surfaces: Opportunities for Atomic Layer Etching

• ‡P-68 T. Tsutsumi
  

  Etch Characteristics of Atomic Layer Etching by Alternating Fluorocarbon Deposition and Oxygen Plasma Etching

Plasma Processes for 3D Device, FPD, Photovoltaic Devices

• †P-69 N. Sato
  

  Voc improvement of Cu₂O based PV by employing ECR plasma redox

Plasma Processes for New Material Devices (MRAM, Power, Organic)

• ‡P-70 S. Rupesh
  

  Fluctuation in nano-carbon pH sensors in a liquid using CNWFETs fabricated by the self-alignment process

• †P-71 D. Ogawa
  

  Investigation of Plasma-functionalization to Small-Size Multi-Walled Carbon Nanotubes

• ‡P-72 A. De Luca
  

  Ion beam processing: an alternative of standard Dry plasma etching

• †P-73 K. Oh
  

  Study on Characteristics of Residual Stress using Composite Materials of Copper-Graphene

• ‡P-74 Y. Tomita
  

  Fabrication of nanostructured TiO₂ photocatalyst by He plasma irradiation and ethylene gas decomposition

• †P-75 W. Zhao
  

  Current induced magnetization switching of hybrid memory layer comprised of CoPd/Pd and Co/Pd multilayers

• ‡P-76 R. Tobe
  

  Self-oscillation properties of M2-phase VO₂ film grown on conductive ITO by ICP-assisted sputtering

• †P-77 Y. Hashimoto
  

  High Density Formation of FePt Nanodots and Their Magnetic Properties

• ‡P-78 K. Nitta
  

  Plasma-assisted inkjet printing of Poly (3, 4 ethylene dioxythiophene) / poly (styrenes sulfonate)

• †P-79 H. Kondo
  

  Synthesis of TiO₂/C Composite Nanoparticles by Discharge Plasma at Pressurized Gas/Liquid Interface

Plasma Processes for Biological and Medical application, MEMS

• ‡P-80 G. Urabe
  

  Structural Change of Multimer Proteins Exposed to 300 kV/cm Electrical Pulses

• ‡P-82 S. Kumagai
  

  Visualization of in-liquid hydroxyl radicals generated by atmospheric pressure plasma jet

• †P-83 T. Hiramatsu
  

  Molecular size dependence of gene transfer efficiency into human cells using surface discharge

• ‡P-84 H. Hashizume
  

  Analysis of radical-treated amino acid using UV absorption spectroscopy for plasma-medical application

• †P-85 Y. Ikeda
  

  Introduction of fluorescent molecules into SUMA fish egg using surface discharge

• ‡P-86 Y. Inoue
  

  Effect of Atmospheric Oxygen Plasma on Osteoclast Differentiation

• †P-87 Y. Ide
  

  Mechanism of Plant Growth Enhancement Using Karrikin Produced by Oxygen Plasma

• ‡P-88 K. Ogawa
  

  Cell viability measurement of melanoma cells treated with nitrogen-oxide-radical activated medium

• †P-89 H. Kondo
  

  Effect of Solutions Irradiated with Oxygen Radicals on Molecular Mobility of Supported Lipid Bilayer

• ‡P-90 S. Feng
  

  Photocatalytic application of helium plasma induced nanostructured tungsten oxides

• †P-91 S. Arata
  

  Reactive Ion Etching in Development of 0.6 mm by 0.6 mm CMOS-Compatible Solid-State Glucose Fuel Cell for Small-Form-Factor Biomedical IoT Applications

• ‡P-92 S. Yoshimura
  

  Controlling feeding gas temperature of plasma jet with Peltier device for experiments with fission yeast

• †P-93 T. Nishikawa
  

  Control of Proliferation and Activation of Myeloid Progenitor Cells Using Plasma Torch

• ‡P-94 K. Takeda
  

  Synthesis of nanographene by in-liquid plasma and its application to catalyst layer of polymer electrolyte fuel cell

• †P-95 H. M. Nguyen
  

  Grating Fabrication for Wavelength Selective Infrared Emitter Using Surface Plasmon Polariton

Atmospheric Pressure Plasma and Liquid Plasma

• ‡P-96 K. Katsuno
  

  Effects of electrical and spectroscopic properties of nonequilibrium atmospheric pressure plasma source on adhesion strengths of a polymeric resin

• †P-97 T. Aizawa
  

  Improvement of Ashing Rate Uniformity Using Water Plasma with a Modified Antenna

• ‡P-98 R. R. Borude
  

  Synthesis of composite of tin oxide particles and graphene sheets employing the in-liquid plasma process

• †P-99 T. Shirafuji
  

  Effects of Dragged Water Vapor on the Chemistry Triggered by Metastable Argon Atoms Irradiated on a Flowing Water Surface at Atmospheric Pressure

• ‡P-100 K. Yambe
  

  Ion Temperature Estimation from Frequency Dependence of Excitation Temperature in Atmospheric-Pressure Nonequilibrium Plasma

• †P-101 K. Kuriyama
  

  Plasma-assisted synthesis of zinc oxide thin film using two different precursor materials

• ‡P-102 K. Ishikawa
  

  Nonequilibrium atmospheric pressure plasma activates organic substances for antitumor effects

• †P-103 R. Kawakami
  

  Hydrophilic Modification of Polypropylene Film Surfaces Treated by Atmospheric-Pressure Air Plasma Jet

• ‡P-104 Y. Yoshitani
  

  Effect of Atmospheric-Pressure O₂ Plasma-Assisted Annealing on Photocatalytic Activity of TiO₂ Nanoparticles

• †P-105 T. T. Nguyen
  

  Effect of alcohol on heat flux, discharge power and the reactive oxygen radical production of argon atmospheric nonthermal plasma jet

• ‡P-106 K. Eto
  

  The effect of ultraviolet light irradiation in gliding arc discharge device using ultraviolet LED

• †P-107 T. Yuji
  

  Decomposition of Sodium Dodecyl Sulfate Aqueous Solution Using Atmospheric-­pressure Non-­equilibrium Microwave Discharge Plasma Jet

• ‡P-108 V. Gamaleev
  

  Optical Emission Spectroscopy of Micro-arc Discharge Plasma in Sea Water at High Pressure

• †P-109 N. Kitakaze
  

  Effect of liquid electrode flow rate on the synthesis of metal nanoparticles by atmospheric-pressure glow discharge

• ‡P-110 H. Yoshiki
  

  Local deposition of diamond-like carbon films by atmospheric pressure pen-like plasma CVD

• †P-111 M. Takeno
  

  Effect of radical irradiation on purple photosynthetic bacteria in various solutions

• ‡P-112 S. Ishikawa
  

  High speed photoresist removal using slot-excited atmospheric-pressure microwave O₂/CF₄ plasma

• †P-113 T. Goto
  

  Promotion of Aspergillus-spore germination through radical irradiation

• ‡P-114 T. Nagase
  

  Inactivation of biofilm-forming Pseudomonas aeruginosa using water treated with oxygen radicals

• †P-115 H. Yajima
  

  Surface Modification of Polytetrafluoroethylene by Line Shaped Ar/Ethanol Atmospheric Pressure Plasma Jet

• ‡P-116 X. Hu
  

  Ultrasonic Assisted Fabrication of Metal Nanoparticles by Laser Ablation in Liquid

New Dry Process Concepts

• †P-117 H. K. Lee
  

  Effect of Rapid and Selective Thermal Process on Dielectric/Metal/Dielectric layers Deposited by Sputtering