DPS2024 45th International Symposium on Dry Process

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Poster Session

Presentation guideline
Poster session is divided into two halves in order to prevent congestion.
At least one of the authors must stay in front of the poster during the assigned Core-Time:
Core-time (1) 10:40 -11:40 Odd numbers
Core-time (2) 11:40 -12:40 Even numbers


Etching Technology

  • †P-1 Yudai Akatsuka

    Influence of Ion Incident Energy on Charge Accumulation at the Bottom of High Aspect Ratio Holes in Dual-Frequency Capacitively-Coupled Plasma

  • ‡P-2 Jia He

    Etching of GaN using Ar/F2 plasma at high temperatures

  • †P-3 Yuki Tatsumi

    In-plane tilting control of memory hole etching in Bi-frequency CCP plasma

  • ‡P-4 Sangbae Lee

    Plasma Etching of Silicon Boride Hard Mask using Fluorocarbon and Nitrogen Tetrafluoride Gases

  • †P-5 Eunsu Lee

    High Aspect Ratio Etching of SiO2 at Low-Temperature using Low-Global Warming C3H2F6

  • †P-7 KyoungChan Kim

    Enhancing the Etch Characteristics of Magnetic Tunnel Junction (MTJ) Layers through RF-Biased RIBE

  • ‡P-8 Kyung Lim Kim

    ON multilayer etch without mask using C4H2F6 - based gas

  • †P-9 Tran Trung Nguyen

    Hydrofluoroethane plasmas with CHF2CF3, CF3CH3, and CHF2CH3 on reactions of etching surface of SiN, SiO2 and poly-Si films

  • ‡P-10 Woo Chang Park

    Highly selective dry etching of SiGe using NF3 -based remote plasma

Manufacturing Technologies (AEC, APC, EES, FDC)

  • †P-13 Hidenobu Tochigi

    Improving Semiconductor Process Monitoring: Structural Innovations in Sapphire-Based Capacitance Manometers

Surface Reaction and Damage

  • ‡P-14 Shota Nunomura

    CF4 plasma etching-induced defects at SiO2/Si interface

  • †P-15 Takuma Yanagisawa

    Ruthenium (Ru) etching by energetic reactive ions

  • ‡P-16 Kotaro Ozaki

    Study on Selective Dry Etching of Epitaxially Grown Si0.7Ge0.3 and Si using H2 Diluted CF4 Plasma

  • †P-17 Hee Yeon Noh

    Analysis of Hydrogen Migration Mechanism and Electrical properties in InGaZnO through Plasma Deposited thin films

  • ‡P-18 Ryoto Takahashi

    UV laser ionization desorption of surfaces for GaN etching

  • †P-19 Shinichi Endo

    Surface reactions of silicon compounds by VUV-Reduction and VUV-Redox using a xenon excimer lamp

Plasma Diagnostics and Monitoring Systems

  • ‡P-20 Junyeob Lee

    Development of a polymer sensor capable of diagnosing chamber contamination during the process

  • †P-21 Myeong Seok Seo

    Etch characteristics of SiO2 for C4F8/C4F6/Ar/O2 Gas Mixture in Triple-frequency Capacitively Coupled Plasma

  • ‡P-22 Hwang Gyu Kim

    Impedance Monitoring of Chamber Contamination in PECVD equipment

  • †P-23 Zoltan Donko

    The effect of N2 addition to Ar gas on the Ar 2p→1s spectral line intensities in a capacitively coupled plasma

  • ‡P-24 Hiroshi Akatsuka

    Optical Emission Spectroscopic Measurement of Electron Temperature and Density of Oxygen ICP

  • †P-25 Yun Seong Cho

    Non-invasive Wall Sheath Diagnostic Method in 300mm Plasma Etching Chamber

  • †P-27 Shohei Nanya

    Measurement of surface reactions of hydrogen atoms on substrates irradiated by H2 inductively coupled plasma

  • ‡P-28 Kakuto Watanabe

    Effect of Electron Density of Low-temperature Plasma for Functionalization of Multi-walled Carbon Nanotube

  • †P-29 Shiro Matsumoto

    Behavior of ions on carbon-HiPIMS using various noble gases

  • ‡P-30 Andrey Ushakov

    Measurements of ion fluxes and photomasks surface degradation to study etch effects in nanolithography applications in low-density H2-plasma

Computational Approaches (Modeling, Simulation, Machine Learning, AI, Informatics, DX) for Dry Process

  • †P-31 Aulia Sukma Hutama

    Kinetic modeling of plasma fluorination on pyrene and coronene as graphene models

  • ‡P-32 Kazuki Denpoh

    Effects of ionization by Ar+ on Ar CCP simulated using GPU-PIC with DNT+DM

  • †P-33 Kosuke Yamamoto

    Structural modification of Ti surfaces via low-energy hydrogen ion irradiation for plasma-enhanced atomic layer processes

  • ‡P-34 Jin Seok Kim

    PiCHY: A GPU Parallelized PIC-MCC Simulator for Actual 300 mm Reactor

  • †P-35 Juan P. Barberena-Valencia

    Improved fidelity of a zero-dimensional model of a capacitively coupled plasma reactor through uncertainty quantification and sensitivity analysis

  • ‡P-36 Haruka Nakano

    Similarity law of surface-wave sustained plasma columns deduced from two-dimensional self-consistent modeling

  • †P-37 Yuan-Ming Chiu

    Precise Ion Energy Distribution Control in ECR Plasma by Using Bias Voltage Waveform Tailoring

  • ‡P-38 Nicolas Mauchamp

    Cryogenic etching of SiO2 surfaces by HF plasmas using MD simulations

  • †P-39 Ji Hyun Shin

    Analysis of phase-resolved ion dynamics in a pulsed RF capacitively coupled plasma using a two-dimensional particle-in-cell simulation

  • ‡P-40 Tomoyuki Murakami

    Statistical analysis of complex chemical reaction networks in low-temperature plasmas

  • †P-41 Hwan Ho Kim

    Two-dimensional particle-in-cell simulation of argon chlorine discharge in capacitively coupled plasma

  • †P-43 Makoto Sato

    Reaction analysis of allyl-Co(CO)3 precursors with Si substrates by using universal machine learning potential

Plasma Generation (Equipment/Source)

  • ‡P-44 Keren Lin

    Development and Measurement of a Gas Temperature Controllable Atmospheric-Pressure Plasma Jet System for Plasma Bio Research

  • †P-45 Md Hasibul Islam

    Impact of like-pole-aligned hybrid MCMF on hydrogen plasma density inside a low-pressure RF driven CCP discharge with a hollow cathode

  • ‡P-46 Yasunori Ohtsu

    Production of a hybrid RF capacitively and inductively coupled plasma using CH4 and H2 mixture gases for preparing carbon nanostructures

  • †P-47 Laxminarayan L. Raja

    Computational modelling of a 1-D pulsed argon capacitively coupled plasma discharge to identify different heating mechanisms

  • ‡P-48 Keishi Yanai

    Nitrogen gas discharge microplasmas generated with a micro-hollow electrode embedded in the ceramic insulator into an open-ambient air

Deposition Technologies (CVD / PVD)

  • †P-49 Yutaka Kusuda

    Low temperature deposition of SiO2 by Plasma Enhanced CVD using SiH4 or TEOS

  • ‡P-50 Futa Shiga

    Controlled synthesis of Wadsley-Ross phase Nb oxide nanowires using a CVD process

  • †P-51 Shinjiro Ono

    Effects of molecular structure of hydrocarbons on deposition characteristics of a-C:H films using plasma CVD

  • ‡P-52 Takeru Okada

    Formation of ZnWO4/WO3 Composite by RF Magnetron Sputtering

  • †P-53 Jiseok Lee

    Understanding Wall Deposited Thin Film of Plasma Deposition Equipment for the In Situ Dry-Cleaning

  • ‡P-54 Yuto Oishi

    PVD and CVD hybrid method with High Power Pulsed Sputtering (HPPS) Plasma for carbon film deposition

  • †P-55 Masanori Shinohara

    Film deposition process during PECVD using organosilane as a source

  • ‡P-56 Kosuke Takenaka

    Evaluation of Stability and Electronic Gap States of Amorphous In-Ga-Zn-Ox Thin Film Transistors

  • †P-57 Yuta Saito

    Low temperature deposition of tin dioxide on PEN substrate using high-power pulsed magnetron sputtering

  • ‡P-58 Yuya Asamoto

    Effect of low-energy ion irradiation during deposition on dielectric breakdown of hexagonal boron nitride films

  • †P-59 Jun Tanaka

    Plasma deposition process of Niobium thin films for ULSI interconnect

  • ‡P-60 Chiyun Bang

    Evaluation of Sputtering Seed Layer Using RF and DC Magnetron Sources in High Aspect Ratio TSV Process

  • †P-61 Ying Hung Chen

    Enhanced Conformal-type Electromagnetic Shielding by High Power Impulse Magnetron Sputter deposited Copper

  • ‡P-62 Takayuki Ohta

    Deposition of InGaZnO film using high power impulse magnetron sputtering

  • †P-63 Naoyuki Sato

    Generation of Ca-Mg-Zn-Ar Mixture Plasma by Inductively Coupled Discharge

  • ‡P-64 Ping-Yen Hsieh

    Improved plasma etching resistance of focus ring by applying gas flow sputtered SiC coating

Atomic Layer Processes (ALD/ALE)

  • †P-65 Taeseok Jung

    Plasma-Enhanced Atomic Layer Etching of Si3N4 at Low Temperature using Trifluoromethane

  • †P-67 Ju Young Kim

    Comparative study of inductively coupled plasma system and ion beam system for Ru atomic layer etching

  • †P-69 Noboru Sato

    Estimation of Vapor Pressures of Metal Organic Complexes using modified COSMO-SAC method

  • ‡P-70 Madjid Adjabi

    Cryogenic Atomic layer Etching of p-Si in fluorine based plasmas

Dry process for Green Transformation:GX (Energy saving technology, Alternative gas, 3D-IC/Packaging)

  • †P-71 Kotaro Kunimoto

    Photocatalytic Characteristics of ZnO Nanoparticles Annealed with Chitosan and Citric Acid at a Low Temperature in Al foil-Shield Combustion Boats

  • ‡P-72 Itsuki Soga

    Vanadium Enables Suppression of Energy Input and Greenhouse Gas Emission for Solid-State Synthesis of Niobium Carbide Electrocatalyst

Plasma Processes for New Material Devices (MRAM, Power, Organic, III-V, 2D)

  • †P-73 Hyeon-Jun Lee

    Advanced techniques in plasma-assisted hydrogen implantation for oxide semiconductors and its analysis of thermal reflectivity

Plasma Processes for Biological and Medical application, MEMS

  • ‡P-74 Kazunori Koga

    Multi-year reproducibility of sugarcane growth promotion effect by administration of air plasma-irradiated leaf mold

Atmospheric Pressure Plasma and Liquid Plasma

  • †P-75 Hayate Tanaka

    Observation of Plasma-Induced Albumin Aggregation Using a High-Speed Camera

  • ‡P-76 Chun Huang

    Induced Grafted Polymerization of a Carboxyl-Rich Poly (acrylic acid) Layer on PTFE Using Helix Atmospheric Pressure Plasma

New Dry Process Concepts

  • †P-77 Akihiro Shimizu

    Effects of Vacuum Ultraviolet Irradiation and Oxygen Plasma Treatment as Pretreatment on Interface Structure between Copper Seed Layer and Cycloolefin Polymer Film

  • ‡P-78 Koshi Kato

    Suitability evaluation of DC arc plasma treated WC-Co granulated powder for laser based additive manufacturing

  • †P-79 Hirotomo Itagaki

    Property improvement of granulated WC-Ni powder by DC-Arc plasma treatment