Special Issues of Japanese Journal of Applied Physics (JJAP)
News for the Special Issues of Japanese Journal of Applied Physics (JJAP).
IF for the special issue of DPS in JJAP
1.67 (2017)
OPEN ACCESS & FREE ACCESS
Regular Papers
DPS paper award that is given to excellent papers in the recent special issues of "Dry Process" and the articles are set "Open Access" for ever, or "Free Access" until December 2025.
DPS2024 DPS Paper Award: "High aspect ratio SiO2/SiN (ON) stacked layer etching using C3HF5, C4H2F6, and C4H4F6"
C. Abe, T. Sasaki, Y. Kondo, S. Yoshinaga, S. Kuboi, H. Fukumizu, M. Omura (Kioxia Corp.) and Y. Takahashi, K. Kato, H. Shimizu (KANTO DENKA KOGYO CO.,Ltd.)
JJAP 63, 06SP10 (2024)
DPS2023 DPS Paper Award: "Modeling and simulation of coverage and film properties in deposition process on large-scale pattern using statistical ensemble method"
N. Kuboi, H. Matsugai, T. Tatsumi, S. Kobayashi, Y. Hagimoto, H. Iwamoto ( Sony Semiconductor Solutions Corp.)
JJAP 62, SI1006 (2023)
DPS2022 DPS Paper Award: "Novel technology of high-aspect-ratio etch utilizing coverage-controllable atomic layer deposition"
S. Kumakura, H. Sasagawa, T. Nishizuka, Y. Kihara, M. Honda (Tokyo Electron Miyagi Ltd.)
JJAP 61, SI1015 (2022)
DPS2020 DPS Paper Award: "Formation mechanism of sidewall striation in high-aspect-ratio hole etching"
M. Omura, J. Hashimoto, T. Adachi, Y. Kondo, M. Ishikawa, J. Abe, I. Sakai, H. Hayashi, M. Sekine, M. Hori
JJAP 58, SEEB02 (2019)
DPS2019 DPS Paper Award: "A method for high selective etch of Si3N4 and SiC with ion modification and chemical removal"
Sho Kumakura, Masahiro Tabata and Masanobu Honda
JJAP, 58(2019), SEEB01
DPS2018 DPS Paper Award: "Atomic layer etching of silicon nitride using infrared annealing for short desorption time of ammonium fluorosilicate",
Nobuya Miyoshi, Hiroyuki Kobayashi, Kazunori Shinoda, Masaru Kurihara, Tomoyuki Watanabe, Yutaka Kouzuma, Kenetsu Yokogawa, Satoshi Sakai, Masaru Izawa
JJAP, 56(2017), 06HB01
DPS2017 DPS Paper Award: "Highly selective etching of LaAlSiOx to Si using C4F8/Ar/H2 plasma",
Sasaki, Toshiyuki; Matsuda, Kazuhisa; Omura, Mitsuhiro; Sakai, Itsuko; Hayashi, Hisataka
JJAP, 54(2015), 06GB03
DPS2016 DPS Paper Award: "Plasma process induced physical damages on multilayered magnetic films for magnetic domain wall motion",
Kinoshita, Keizo; Honjo, Hiroaki; Fukami, Shunsuke; et al.
JAPP, 53(2014), 03DF03
DPS2015 DPS Paper Award: "Effects of straggling of incident ions on plasma-induced damage creation in "fin"-type field-effect transistors",
Eriguchi, Koji; Matsuda, Asahiko; Takao, Yoshinori; et al.
JJAP, 53(2014), 03DE02
Progress Reviews
"Review and perspective of dry etching and deposition process modeling of Si and Si dielectric films for advanced CMOS device applications"
Nobuyuki Kuboi
JJAP 63 080801 (2024)
"Progress report on high aspect ratio patterning for memory devices"
Meihua Shen, Thorsten Lill, John Hoang, Hao Chi, Aaron Routzahn, Jonathan Church, Pramod Subramonium, Ragesh Puthenkovilakam, Sirish Reddy, Sonal Bhadauriya et al
JJAP 62 (2023), SI0801
"Rethinking surface reactions in nanoscale dry processes towardatomic precision and beyond: a physics and chemistry perspective"
Kenji Ishikawa, Tatsuo Ishijima, Tatsuru Shirafuji, Silvia Armini, Emilie Despiau-Pujo, Richard A. Gottscho, Keren J. Kanarik, Gert J. Leusink, Nathan Marchack, Takahide Murayama, Yasuhiro Morikawa, Gottlieb S. Oehrlein, Sangwuk Park, Hisataka Hayashi and Keizo Kinoshita
JJAP.58(2019), SE0801
"Progress and perspectives in dry processes for nanoscale featurefabrication: fine pattern transfer and high-aspect-ratio featureformation"
Taku Iwase, Yoshito Kamaji, Song Yun Kang, Kazunori Koga, Nobuyuki Kuboi, Moritaka Nakamura, Nobuyuki Negishi, Tomohiro Nozaki, Shota Nunomura, Daisuke Ogawa, Mitsuhiro Omura, Tetsuji Shimizu, Kazunori Shinoda, Yasushi Sonoda, Haruka Suzuki, Kazuo Takahashi, Takayoshi Tsutsumi, Kenichi Yoshikawa, Tatsuo Ishijima and Kenji Ishikawa
JJAP.58(2019), SE0802
"Progress and perspectives in dry processes for emergingmultidisciplinary applications: how can we improve our use of dry processes?"
Taku Iwase, Yoshito Kamaji, Song Yun Kang, Kazunori Koga, Nobuyuki Kuboi, Moritaka Nakamura, Nobuyuki Negishi, Tomohiro Nozaki, Shota Nunomura, Daisuke Ogawa, Mitsuhiro Omura, Tetsuji Shimizu, Kazunori Shinoda, Yasushi Sonoda, Haruka Suzuki, Kazuo Takahashi, Takayoshi Tsutsumi, Kenichi Yoshikawa, Tatsuo Ishijima and Kenji Ishikawa
JJAP.58(2019), SE0803
"Progress and perspectives in dry processes for leading-edgemanufacturing of devices: toward intelligent processes and virtualproduct development"
Taku Iwase, Yoshito Kamaji, Song Yun Kang, Kazunori Koga, Nobuyuki Kuboi, Moritaka Nakamura, Nobuyuki Negishi, Tomohiro Nozaki, Shota Nunomura, Daisuke Ogawa, Mitsuhiro Omura, Tetsuji Shimizu, Kazunori Shinoda, Yasushi Sonoda, Haruka Suzuki, Kazuo Takahashi, Takayoshi Tsutsumi, Kenichi Yoshikawa, Tatsuo Ishijima and Kenji Ishikawa
JJAP.58(2019), SE0804
"Progress in nanoscale dry processes for fabrication of high-aspect-ratio features: How can we control critical dimension uniformity at the bottom?”,
Kenji Ishikawa, Kazuhiro Karahashi, Tatsuo Ishijima, Sung Il Cho, Simon Elliott, Dennis Hausmann, Dan Mocuta, Aaron Wilson and Keizo Kinoshita
JJAP.57(2018).06JA01
- The publication charge is 40000JPY/article.
https://iopscience.iop.org/journal/1347-4065/page/About - JJAP Special Issues is published in the web site;
DPS2023 (Jpn. J. Appl. Phys. 63 July 2024.) (Free until July 2025)
https://iopscience.iop.org/collections/jjap-240402-02
DPS2022 (Jpn. J. Appl. Phys. 62 July 2023.) (Free until July 2024)
https://iopscience.iop.org/issue/1347-4065/62/SI
DPS2021 (Jpn. J. Appl. Phys. 61 July 2022.)
https://iopscience.iop.org/issue/1347-4065/61/SI
DPS2019 (Jpn. J. Appl. Phys. 59 June 2020.)
https://iopscience.iop.org/issue/1347-4065/59/SJ
DPS2018 (Jpn. J. Appl. Phys. 58 June 2019.)
https://iopscience.iop.org/issue/1347-4065/58/SE
DPS2017 (Jpn. J. Appl. Phys. 57 June 2018.)
http://iopscience.iop.org/issue/1347-4065/57/6S2
DPS2016 (Jpn. J. Appl. Phys. 56 June 2017.)
http://iopscience.iop.org/issue/1347-4065/56/6S2
DPS2015(Jpn. J. Appl. Phys. 55(6S2) June 2016)
http://iopscience.iop.org/issue/1347-4065/55/6S2
DPS2014(Jpn. J. Appl. Phys. 54(6S2) June 2015)
http://iopscience.iop.org/1347-4065/54/6S2
DPS2013(Jpn. J. Appl. Phys. 53 (3S2) March 2014)
http://iopscience.iop.org/1347-4065/53/3S2