Committee Chairpersons

• Organizing Committee Chair: Masanobu Honda (TOKYO ELECTRON MIYAGI LTD.)
• Executive Committee Chair: Masafumi Jinno (Ehime University)
• Program Committee Chair: Masaru Kurihara (Hitachi, Ltd.)
• Publication Committee Chair: Kazuo Takahashi (Kyoto Institute of Technology

Organizing Committee

Chair:	M. Honda (TOKYO ELECTRON MIYAGI LTD.) Japan
Vice-chair:	K. Kurihara (KIOXIA Corp.) Japan
	H. Akatsuka (Institute of Science Tokyo) Japan
	K. Eriguchi (Kyoto University) Japan
	M. Fukasawa (Advanced Industrial Science and Technology-AIST) Japan
	S. Hamaguchi　(The University of Osaka) Japan
	H. Hayashi (Daikin Industries, Ltd.) Japan
	S. Higashi (Hiroshima University) Japan
	M. Hori (Nagoya University) Japan
	T. Ichiki (The University of Tokyo) Japan
	K. Ishikawa (Nagoya University) Japan
	M. Jinno (Ehime University) Japan
	K. Karahashi (The University of Osaka) Japan
	K. Kinoshita (AIO Core Co., Ltd.) Japan
	K. Koga (Kyushu University) Japan
	H. Kokura (Tokyo Electron Ltd.) Japan
	T. Koshizawa (Applied Materials Inc.) USA
	N. Kuboi (Sony Semiconductor Solutions Corp.) Japan
	M. Kurihara (Hitachi, Ltd.) Japan
	T. Maruyama (Renesas Electronics Corp.) Japan
	M. Matsui (Hitachi, Ltd.) Japan
	Y. Morikawa (ULVAC Inc.) Japan
	M. Nakatani (Panasonic Industry Co., Ltd.) Japan
	T. Ohba (Lam Research Corp.) Japan
	D. Ogawa (Chubu University) Japan
	M. Omura (KIOXIA Corp.) Japan
	K. Satoh (Muroran Institute of Technology) Japan
	T. Shirafuji (Osaka Metropolitan University) Japan
	M. Shiratani (Kyushu University) Japan
	K. Takahashi (Kyoto Institute of Technology) Japan
	K. Takeda (Meijo University) Japan
	K. Takenaka (The University of Osaka) Japan
	T. Tatsumi (The Japan Society of Applied Physics -JSAP) Japan
	M. Terahara (Sandisk Corp.) Japan
	F. Tochikubo (Tokyo Metropolitan University) Japan
	T. Watanabe (Waseda University) Japan

International Organizing Committee

	S. M. George (University of Colorado Boulder) USA
	O. Joubert (LTM/CNRS) France
	W.M.M. Kessels (Eindhoven University of Technology) Netherlands
	I. G. Koo (Interuniversity Microelectronics Center-IMEC) Belgium
	S. Kundu (Interuniversity Microelectronics Center-IMEC) Belgium
	H.J. Lee (Pusan National University) Korea
	K. C. Leou (National Tsing Hua University) Taiwan
	T. Lill (Lam Research Corp.) USA
	G. S. Oehrlein (University of Maryland) USA
	S. Shannon (North Carolina State University) USA
	J.S. Wu (National Yang Ming Chiao Tung University) Taiwan
	G-Y. Yeom (Sungkyunkwan University) Korea

Executive Committee

Chair:	M. Jinno (Ehime University) Japan
Vice-chair:	F. Tochikubo (Tokyo Metropolitan University) Japan
Vice-chair:	K. Satoh (Muroran Institute of Technology) Japan
	A. Hatta (Kochi University of Technology) Japan
	Y. Ikeda (Ehime University) Japan
	H. Motomura (Ehime University) Japan
	S. Mukasa (Ehime University) Japan

Publication Committee

Chair:	K. Takahashi (Kyoto Institute of Technology) Japan
Vice-chair:	K. Takenaka (The University of Osaka) Japan
Vice-chair:	K. Takeda (Meijo University) Japan
	M. Fukasawa (Advanced Industrial Science and Technology-AIST) Japan
	N. Hayashi (Kyushu University) Japan
	K. Ishikawa (Nagoya University) Japan
	K. Koga (Kyushu University) Japan
	S. Nunomura (Advanced Industrial Science and Technology-AIST) Japan
	D. Ogawa (Chubu University) Japan
	T. Yagisawa (Sony Semiconductor Solutions Corp.) Japan

Program Committee

Chair:	M. Kurihara (Hitachi, Ltd.) Japan
Vice-chair:	N. Kuboi (Sony Semiconductor Solutions Corp.) Japan
Vice-chair:	M. Omura (KIOXIA Corp.) Japan
	K.H. Bai (Samsung Electronics Co., Ltd.) Korea
	J-P. Booth (CNRS/Ecole Polytechnique) France
	R. L. Bruce (IBM Corp.) USA
	Y. Daigo (Tokyo Electron Ltd.)　Japan
	E. Despiau-Pujo (CNRS/University of Grenoble Alpes) France
	K. Doi (ULVAC Inc.) Japan
	R. Dussart (CNRS/Université d'Orléans) France
	M. Fukasawa (Advanced Industrial Science and Technology-AIST) Japan
	I. P. Ganachev (Shibaura Mechatronics Corp.) Japan
	K. Hattori (Nagoya University) Japan
	N. Hayashi (Kyushu University) Japan
	T. Hayashi (Nagoya University) Japan
	S. Higashi (Hiroshima University) Japan
	M. Hiramatsu (Meijo University) Japan
	M. Honda (TOKYO ELECTRON MIYAGI LTD.) Japan
	T. Ichiki (The University of Tokyo) Japan
	K. Ishikawa (Nagoya University) Japan
	Y. Ishii (Hitachi High Technologies America, Inc.) USA
	S. Kanakamedala (Sandisk Corp.) USA
	S. Y. Kang (Samsung Electronics Co., Ltd.) Korea
	K. Karahashi (The University of Osaka) Japan
	K. Koga (Kyushu University) Japan
	H. Kokura (Tokyo Electron Ltd.) Japan
	H. Kondo (Kyushu University) Japan
	I. G. Koo (Interuniversity Microelectronics Center-IMEC) Belgium
	T. Koshizawa (Applied Materials Inc.) USA
	S. Kuboi (KIOXIA Corp.) Japan
	K. Kurihara (KIOXIA Corp.) Japan
	T. Maruyama (Renesas Electronics Corp.) Japan
	S. Miyazaki (Hiroshima University) Japan
	H. Miyazoe (IBM Corp.) USA
	N. Miyoshi (Hitachi, Ltd.) Japan
	Y. Miyoshi (Sony Semiconductor Manufacturing Corp.) Japan
	Y. Morikawa (ULVAC Inc.) Japan
	M. Morimoto (Hitachi High-Tech Corp.) Japan
	K. Nakamura (Chubu University) Japan
	M. Nakamura (MAMO) Japan
	S. Nunomura (Advanced Industrial Science and Technology -AIST) Japan
	T. Ohba (Lam Research Corp.) Japan
	S. Okita (Panasonic Connect Co., Ltd.) Japan
	M. Oryoji (Sandisk Corp.) Japan
	E. Pargon (LTM-CNRS) France
	F. Roozeboom (University of Twente) Netherlands
	T. Seki (Kyoto University) Japan
	Y. Setsuhara (The University of Osaka) Japan
	P. Shen (Air Liquide Japan, Ltd.) Japan
	Y. Shimogaki (The University of Tokyo) Japan
	T. Shirafuji (Osaka Metropolitan University) Japan
	M. Shiratani (Kyushu University) Japan
	E. Stamate (Technical University of Denmark) Denmark
	R. Suemitsu (Hitachi High-Tech Corp.) Japan
	K. Takahashi (Kyoto Institute of Technology) Japan
	K. Tapily (TEL Technology Center America) USA
	M. Terahara (Sandisk Corp.) Japan
	M. Titus (The University of Arizona) USA
	A. Tsuji (Tokyo Electron Ltd.) Japan
	J. H. Um (Samsung Electronics Co., Ltd.) Korea
	M. Yamada (Hitachi, Ltd.) Japan
	G-Y. Yeom (Sungkyunkwan University) Korea

Advisory Committee

Chair:	T. Makabe (Keio University) Japan
	S. Fujimura (Institute of Science Tokyo) Japan
	N. Fujiwara (Mitsubishi Electric Corp.)
	R. A. Gottscho (EVP Lam Research -retired, SemiSan) USA
	J-G. Han (Sungkyunkwan University) Korea
	K. Nojiri (Nanotech Research) Japan
	K. Ono (The University of Osaka) Japan
	K. Tachibana (Kyoto University) Japan
	O. Takai (Kanto Gakuin University) Japan