Invited Speakers
Nishizawa Award Lectures and titles
- Masaru Hori (Nagoya University)
"Evolution of dry processes" - Olivier Joubert (CNRS)
"Latest development in plasma technologies for nanoelectronics devices"
Invited speakers and titles
A1. Applications and Researches of Atomic Layer Controlled Etching and Deposition(ALE/ALD/Area Selective-ALD)
- Sumit Agarwal (Colorado School of Mines)
"Selective Surface Functionalization of Si-Based Dielectrics to Enhance Selectivity During Atomic Layer Etching" - Erwine Pargon (University Grenoble Alpes, CNRS, LTM)
"Cycling process in remote plasma source for selective etching with nanometric control"
A2. Challenges to Limits for High Aspect Ratio Etching
- Yeon Ho Im (Jeonbuk National University)
"Toward realistic 3D feature profile simulation on high-aspect-ratio oxide etch" - Thorsten Lill (Lam Research Corp.)
"Deposition and etch co-optimization to meet scaling requirements for vertically integrated memories"
A3. Rethinking of Cryogenic Etching
- Rémi Dussart (GREMI - Université d'Orléans)
"Plasma cryogenic etching : benefits of cooling the substrate at a low temperature in etching process technologies"
Plasma Etching New Material
- Luxherta Buzi (IBM Corp. )
"Investigation of Plasma Etch Damage of Ge2Sb2Te5 for Storage Class Memory and AI"
In conjunction with
